Copyright: ® SOPRA S.A.


Index
WinElli Software

Contents

Overview

n,k database

Dispersion laws


Overview

Presentation

Extraction methods

File Structure

Alloy model


n,k database

II-VI Compounds

III-V Compounds

Aluminum Compounds

Germanium Compounds

Glasses

Metals

Nitrides

Oxides

Oxynitrides

Silicides

Silicon

Silicon Compounds

Miscellaneous

References :


Dispersion laws

Introduction

Standard dielectric functions

Forouhi Interband Model

Model Dielectric function


Presentation

This help file is a summary of the n,k database provided by SOPRA to use the WinElli software.

The following points are developed:

•	The structure of the n,k ASCII files

•	The structure of the Alloy model data files

•	The list of all the materials available as n,k files.

•	The list of the materials available as dispersion law files.

In all the cases, some details on the origin of the data are be given.


Extraction methods

A great number of techniques are used to measure accurately the optical indices of films and materials. Of course spectroscopic ellipsometry is a technique of choice but other kinds of measurements can also be use such as interferometry, absorpbance technique and so on. The reader can have an extended idea of all these techniques in the Palik's book.

The Data files ( File.NK ) tabulates the refractive index and the extinction coefficient of various materials and have been collected from different references. Most of these data have been interpolated to have a constant step.

The SOPRA measurements were made on a spectroscopic ellipsometer ES4G. Depending on the sample structure, we used then two models to calculate the index :

•	We consider the sample as a bulk .

•	Or as one layer on a known substrat ( on majority , Si substrat ).


File Structure

All the n,k files are in ASCII and have the following structure:

The following numbers are the next n and k values.


Alloy model

For compound materials and especially for semiconductor compounds the Bruggemann model is not accurate to take into account the influence of the composition. Indeed the occurance of critical points which are composition dependent makes necessary the use of a more complex model.

We use the alloy model first proposed by D.Aspnes in 1986. It is based on the use of measured dielectric functions for discrete nominal compositions. The compositional variation is obtained by taking the weighted average of the two spectra closest in composition after their energy scales have been shifted to bring the nearest critical point energies into coincidence.

Related Topics:

Theory


Theory

In practice when there is different critical points in the wavelength range of interest the region is splitted in different parts ascribed to each critical point Ei. The composition dependance of each critical point is represented by a polynomial approximation of degree 3:

The coefficients of this dependance are extracted from the litterature and summarized in each case in the following. Then the shifts of energy of the different critical points compared to the two discrete closest experimental spectra [image] and [image] are calculated:

Finally at each energy the calculated spectrum for x is the weighted average of the two shifted spectra:

The accuracy of the algorithm depends on the accuracy of the different original measurements and the difference between x and the nearest endpoint [image] or [image].


II-VI Compounds

Mercury Cadmium Telluride

Zinc Cadmium Telluride

Zinc Sulfide (cubic)

Zinc Selenide

Zinc Selenium Telluride


Mercury Cadmium Telluride

Three compositions

wavelength range : 	0.2	0.9µm

Reference 	Reference 11

Alloy file	HgCdTe

Number of critical points	3

first critical point	E1 = 2.147+0.44*x+0.7*x2

Second critical point	E1+Δ1 = 2.778+0.47*x+0.6*x2

Third critical point	E2 = 4.8+0.66*x-0.06*x2


Zinc Cadmium Telluride

Seven cadmium concentrations

energy range	1.1	5.4eV

reference	Reference 11

Alloy file	ZnCdTe

Number of critical points	5

first critical point	E0 = 2.28-0.7*x

Second critical point	E0+Δ0 = 3.2-0.65*x

Third critical point	E1 = 3.78-0.23*x

Fourth critical point	E1+Δ1 = 4.34-0.21*x

fifth critical point	E2 = 5.23-0.1*x

For details see:

T.Toshifumi, S. Adachi , H. Nakanishi. , and K. Ohtsuka. "Optical constants

of Zn1-xCdxTe Ternary alloys : Experiment and Modeling ".

Jpn. Appl. Phys. Vol 32 (1993) pp.3496-3501.

Part 1, N° 8, August 1993.


Zinc Sulfide (cubic)

Filename	ZnSCub

symbol	ZnS

energie  range	1	6eV

reference	Reference 11


Zinc Selenide

Filename	ZnSe

symbol	ZnSe

energie  range	1	6.5eV

reference	Reference 11


Zinc Selenium Telluride

Seven Tellure concentrations

energie  range	0.7	6.3eV

reference	Reference 11

Alloy file	ZnSeTe

Number of critical points	5

first critical point	E0 = 2.28-0.82*x+1.23*x2

Second critical point	E0+Δ0 = 3.2-0.79*x+0.69*x2

Third critical point	E1 = 3.78-0.04*x+1.09*x2

Fourth critical point	E1+Δ1 = 4.34-0.04*x+0.83*x2

fifth critical point	E2 = 5.23-1.47*x

For details see:

S.Ozaki, S. Adachi ." Optical constants of ZnSexTe1-x alloys ".

Jpn. Appl. Phys. Vol 32 (1993) pp.2620-2625.

Part 1, N° 6A, August 1993.


III-V Compounds

Gallium Arsenide

Gallium Arsenide  (Temperature)

Gallium Arsenide (100)

Gallium Arsenide (111)

Gallium Phosphide

Gallium Phosphide (100)

Gallium Antimonide

Indium Antimonide

Indium Arsenide

Indium Gallium Antimonide

Indium Gallium Arsenide

Indium Gallium Arsenide (strained)

Indium Gallium Arsenide (relaxed)

Indium Phosphide


Gallium Arsenide

Filename	GaAs

symbol   	GaAs

energy range	0.5	6 eV

reference	Reference 1


Gallium Arsenide  (Temperature)

28 files versus temperature (31°C to 634°C )

symbol   	GaAs

energy range	1.2	4.5 eV

reference	Reference 47:


Gallium Arsenide (100)

Filename	GaAs100

symbol   : 	GaAs

wavelength range	0234	0.84µm

reference	Reference 11


Gallium Arsenide (111)

Filename	GaAs111

symbol   : 	GaAs

wavelength range	0234	0.84µm

reference	Reference 11


Gallium Phosphide

Filename	GaP

symbol   :    	GaP

energy range	0.5	6eV

reference	Reference 11


Gallium Phosphide (100)

Filename	GaP100

symbol   : 	GaP

wavelength range	0.234	0.84µm

reference	Reference 11


Gallium Antimonide

Filename	GaSb

symbol   : 	GaSb

wavelength range	1.25	6eV

reference	Reference 11


Indium Antimonide

Filename	InSb

symbol   : 	InSb

energy range	1	6eV

reference	Reference 11


Indium Arsenide

Filename	InAs

symbol   : 	InAs

energy range	1	6eV

reference	Reference 11


Indium Gallium Antimonide

Seven gallium compositions

wavelength range	0.225	0.825µm

reference	Reference 11

Alloy file	Ingasb

Number of critical points	6

first critical point	E1 = 1.93-0.18*x+0.38*x2

Second critical point	E1+Δ1 = 2.44-0.14*x+0.28*x2

Third critical point	E0' = 3.26

Fourth critical point	E0'+Δ0' = 3.63

fifth critical point	E2 = 3.92-0.1*x+0.24*x2

sixth critical point	E1' = 5.3+0.15*x

For details see:

S.IMAI, S. Adachi ." Optical constants of In1-xGaxSb Ternary

alloys : Experiment and Modeling ".Jpn. Appl. Phys. Vol 32 (1993)

 pp.3860-3865.Part 1, N° 9A, September 1993.


Indium Gallium Arsenide

Filename	InGaAs

symbol	In0.53Ga0.74As

energy range	1	6eV

reference	Reference 11


Indium Gallium Arsenide (strained)

Four different gallium compositions

wavelength range	0.24	0.84μm

reference	Reference 11

Alloy file	SinGas

Number of critical points	3

first critical point	E1 = 2.91-0.603*x+0.066*x2

Second critical point	E1+Δ1 = 3.126-0.467*x+0.883*x2

Third critical point	E0 = 4.85

For details see:

C. Pickering, R. carline, M. Emeny, N. Garawal, L.Howard, Appl. Phys. Lett., 60, 2412 (1992)


Indium Gallium Arsenide (relaxed)

Four different indium percentages

energy range	0.5	6eV

reference	Reference 11 for GaAs

reference	Reference 11 for InGaAs

Alloy file	RinGas

Number of critical points	3

first critical point	E1 = 2.91-0.603*x+0.066*x2

Second critical point	E1+Δ1 = 3.126-0.467*x+0.883*x2

Third critical point	E0 = 4.85

For details see:

C. Pickering, R. carline, M. Emeny, N. Garawal, L.Howard, Appl. Phys. Lett., 60, 2412 (1992)


Indium Phosphide

Filename	InP

symbol	InP

energy range	0.5	6eV

reference	Reference 11


Aluminum Compounds

Aluminum

Aluminum Arsenide

Aluminum Arsenide (Temperature )

Aluminum Copper

Aluminum Gallium Indium Phosphide

Aluminum Gallium Arsenide

Aluminum Antimonide

Aluminum Silicon

Aluminum Silicon Titanium


Aluminum

Filename	Al

symbol	Al

energy range	0.5	6.75eV

reference	Reference 1


Aluminum Arsenide

Filename	AlAs

symbol	AlAs

energy range	0.5	5.6 eV

reference	Reference 14


Aluminum Arsenide (Temperature )

22 files versus temperature (28°C to 626°C)

symbol	AlAs

energy range	1.3	4.5.6eV

Reference	Reference 48:


Aluminum Copper

Filename	AlCu

symbol	AlCu

wavelength range	0.25	0.9µm

reference	Reference 3


Aluminum Gallium Indium Phosphide

Six different aluminum contents

wavelength range	0.225	1µm

reference	Reference 19

Alloy file	AgaInP

Number of critical points	3

first critical point	E0 = 1.89+0.64*x

Second critical point	E1 = 3.28+0.33*x+0.13*x2

Third critical point	E2 = 4.78-0.05*x+0.06*x2


Aluminum Gallium Arsenide

Eleven different Aluminum contents

energy range	0.5	6 eV

reference	Reference 9

Alloy file	AlGaAs

Number of critical points	3

first critical point	E0 = 1.424+1.721*x-1.437*x2+1.310*x3

Second critical point	E1 = 2.924+0.808*x-0.778*x2+0.935*x3

Third critical point	E2 = 4.8


Aluminum Antimonide

Filename	AlSb

symbol	AlSb

energy range	0.5	5.8 eV

reference	Reference 14


Aluminum Silicon

Filename	AlSi

symbol	AlSi

wavelength range	0.25	0.8µm

reference	Reference 3


Aluminum Silicon Titanium

Filename	AlSiTi

symbol	AlSiTi

wavelength range	0.25	0.8µm

reference	Reference 3


Germanium Compounds

Germanium

Germanium (100)

Silicon Germanium alloy

Silicon Germanium Alloy (relaxed)

Silicon Germanium alloy (strained)

Silicon Germanium alloy on Germanium

Silicon Germanium alloy on Silicon


Germanium

Filename	Ge

symbol	Ge

wavelength range	0.5	6eV

reference	Reference 11


Germanium (100)

Filename	Ge100

symbol	Ge

wavelength range	0.24	0.84µm

reference	Reference 11


Silicon Germanium alloy

Six different silicon contents

wavelength range	0.24	0.84μm

reference	Reference 11


Silicon Germanium Alloy (relaxed)

Nine different germanium contents

energy range	0.5	7.6eV

reference	Reference 11 for Si and Ge

reference	Reference 11 for SiGe alloys

Alloy file	ReSiGe

Number of critical points	4

first critical point	E0' = 3.31-0.28*x

Second critical point	E1 = 3.395-1.44*x+0.153*x2

Third critical point	E1+Δ1 = 3.428-1.194*x+0.062*x2

Fourth critical point	E2= 4.42-0.03*x

For details see:

C.Pickering, R.T.Carline D.J.Robbins, W.Y.Leong, S.J.Barnett, A.D.Pitt

"Spectroscopic Ellipsometry characterization of strained and relaxed Si(1-x)Gex epitaxial layers"

J.Appl.Phys.73(1)(1993) 239-250.


Silicon Germanium alloy (strained)

Four different germanium contents

energy range	2	5eV

reference	Reference 11

Alloy file	StSiGe

Number of critical points	5

Gap	E = 1.1053-0.896*x+0.396*x2

First critical point	E0' = 3.31-0.28*x

Second critical point	E1 = 3.395-1.44*x+0.153*x2

Third critical point	E1+Δ1 = 3.428-1.194*x+0.062*x2

Fourth critical point	E2= 4.42-0.03*x

For details see:

R.T.Carline,C.Pickering,D.J.Robbins,W.Y.Leong, A.D.Pitt, and A.G.Cullis

"Dielectric functions and critical points of strained SixGe(1-x) on Si (100)"

Appl.Phys.Lett.(submitted).


Silicon Germanium alloy on Germanium

Filename	SiGe_Ge

symbol	SiGe

wavelength range	0.24	0.84μm

reference	Reference 11


Silicon Germanium alloy on Silicon

Filename	SiGe_Si

symbol	SiGe

wavelength range	0.24	0.84μm

reference	Reference 11


Glasses

Glass Corning 7059

Glass 7059

Glass BK7

Glass LASF9

Glass SF11


Glass Corning 7059

Filename	Cor7059

symbol	7059

wavelength range	0.44	0.65µm

reference	Reference 26


Glass 7059

Filename	7059Selm

symbol	7059

wavelength range	0.25	0.9 µm

reference	Reference 26


n,k database - Glasses - Glass BK7
Glass BK7

Filename	BK7

symbol	BK7

energy range	1	6.5 eV

reference	Reference 7


Glass LASF9

Filename	LASF9

symbol	LASF9

energy range	1	5.9eV

reference	Reference 11


Glass SF11

Filename	SF11

symbol	SF11

energy range	1	5.9eV

reference	Reference 11


Metals

Cobalt bulk

Cobalt (Hexagon thin films)

Chromium

Copper

Gold

Iridium

Molybdenum

Nickel

Osnium

Palladium

Platinum

Rhodium

Silver

Tantalum

Titanium

Vandadium

Tungsten


Cobalt bulk

Filename	Co

symbol	Co

wavelength range	0.25	0.9µm

reference	Reference 3


Cobalt (Hexagon thin films)

Filename	Co-2

symbol	Co

energy range	0.65	6.6 eV

reference	Reference 14


Chromium

Filename	Cr

symbol	Cr

energy range	1	6 eV

reference	Reference 5


Copper

Filename	Cu

symbol	Cu

energy range	0.5	6.5 eV

reference	Reference 1


Gold

Filename	Au

symbol	Au

energy range	0.5	6 eV

reference	Reference 1


Iridium

Filename	Ir

symbol	Ir

energy range	0.5	6.5eV

reference	Reference 11


Molybdenum

Filename	Mo

symbol	Mo

energy range	0.5	6.5eV

reference	Reference 11


Nickel

Filename	Ni

symbol	Ni

energy range	0.5	6.5eV

reference	Reference 11


Osnium

Filename	Os

symbol	Os

energy range	0.5	6eV

reference	Reference 11


Palladium

Filename	Pd

symbol	Pd

energy range	0.5	6.5eV

reference	Reference 11


Platinum

Filename	Pt

symbol	Pt

energy range	0.5	6eV

reference	Reference 11


Rhodium

Filename	Rh

symbol	Rh

energy range	0.5	6eV

reference	Reference 11


Silver

Filename	Ag

symbol	Ag

energie range	0.6	6.6eV

reference	Reference 1


Tantalum

Filename	Ta

symbol	Ta

wavelength range	0.18	2.48μm

reference	Reference 11


Titanium

Filename	Ti

symbol	Ti

energy range	1	6eV

reference	Reference 11


Vandadium

Filename	V

symbol	V

energie  range	0.5	6eV

reference	Reference 11


Tungsten

Filename	W

symbol	W

energie  range	0.5	6.5eV

reference	Reference 11


Nitrides

Silicon Nitride

Titanium nitride


Silicon Nitride

Filename	Si3N4

symbol	Si3N4

energy range	1	8eV

reference	Reference 11


Titanium nitride

Filename	TiNi

symbol	TiN

wavelength range	0.25	0.9μm

reference	Reference 11


Oxides

Aluminum Oxyde 1

Aluminum Oxyde 2

Cuprous oxide

Cupric oxide

Gallium Arsenide Oxide (1)

Gallium Arsenide Oxide(2)

Gallium Phosphide oxide

Gallium Antimonide oxide

Hafnium oxyde

Indium Antimonide Oxide

Indium Arsenide Oxide

Indium Phosphide Oxide

Silicon dioxide

Silicon monoxide

Silicon monoxide 1

Tantalum oxide 1

Tantalum oxide 2

Titanium oxide 1

Titanium oxide 2

Ytrium oxide

Zirconium oxide


Aluminum Oxyde 1

Filename	Al2O3

symbol	Al2O3

wavelength range	0.25	0.9µm

reference	Reference 3


Aluminum Oxyde 2

Filename	Al2O3P

symbol	Al2O3

energy range	05	6 eV

reference	Reference 14


Cuprous oxide

Filename	Cu2O

symbol	Cu2O

energy range	0.5	4.2 eV

reference	Reference 14


Cupric oxide

Filename	CuO

symbol	CuO

energy range	0.5	4.2 eV

reference	Reference 14


Gallium Arsenide Oxide (1)

Filename	GaAsO

symbol	GaAsO

wavelength range	1	6eV

reference	Reference 11


Gallium Arsenide Oxide(2)

Filename	GaAsOx

symbol	GaAsO

wavelength range	1.6	6eV

reference	Reference 11


Gallium Phosphide oxide

Filename	GaPOx

symbol	GaPO

wavelength range	1.6	6eV

reference	Reference 11


Gallium Antimonide oxide

Filename	GaSbOx

symbol	GaSbO

wavelength range	1.6	6eV

reference	Reference 11


Hafnium oxyde

Filename	HfO2

symbol	HfO2

wavelength range	0.25	0.9µm

reference	Reference 11


Indium Antimonide Oxide

Filename	InSbOx

symbol	InSbO

energy range	1.6	6eV

reference	Reference 11


Indium Arsenide Oxide

Filename	InAsOx

symbol	InAsO

energy range	1.6	6eV

reference	Reference 11


Indium Phosphide Oxide

Filename	InPOx

symbol	InPO

energy range	1.6	6eV

reference	Reference 11


Silicon dioxide

Filename	SiO2

symbol	SiO2

energy range	0.6	7.6eV

reference	Reference 11


Silicon monoxide

Filename	SiO

symbol	SiO

energy range	0.6	5.9eV

reference	Reference 11


Silicon monoxide 1

Filename	SiOP

symbol	SiO

energy range	0.65	6.5eV

reference	Reference 11


Tantalum oxide 1

Filename	TaOx1

symbol	Ta2O5

wavelength range	0.3	0.85μm

reference	Reference 11


Tantalum oxide 2

Filename	TaOx2

symbol	Ta2O3

wavelength range	0.25	0.85μm

reference	Reference 11


Titanium oxide 1

Filename	TiO2

symbol	TiO2

wavelength range	0.18	1.5μm

reference	Reference 11


Titanium oxide 2

Filename	TiO2B

symbol	TiO2

wavelength range	0.22	2.42μm

reference	Reference 11


Ytrium oxide

Filename	Y2O3

symbol	Y2O3

energie  range	0.5	6eV

reference	Reference 11


Zirconium oxide

Filename	ZrO2

symbol	ZrO2

wavelength range	0.25	0.85μm

reference	Reference 11


Oxynitrides

Aluminum Oxynitride

Silicon Oxynitride


Aluminum Oxynitride

Filename	AlON

symbol	AlON

energy range	0.5	3.1 eV

reference	Reference 14


Silicon Oxynitride

wavelength range	0.25	0.8μm

reference	Reference 11


Silicides

Cobalt silicide

Chromium silicide 1

Chromium silicide 2

Chromium silicide 3

Iron silicide 1

Iron silicide 2

Iron silicide 3

Hafnium silicide

Iridium silicide 1

Iridium silicide 2

Molybdenum silicide

Niobium silicide

Nickel silicide 1

Nickel silicide 2

Nickel silicide 3

Paladium silicide

Rhenium silicide

Tantalum silicide

Titanium silicide

Vanadium silicide

Tungsten silicide

Zirconium silicide


Cobalt silicide

Filename	CoSi2-4

symbol	CoSi2

energy range	1	4.8eV

reference	Reference 31

Comment	Measured on epitaxial MBE film


Chromium silicide 1

Filename	Cr3Si

symbol	Cr3Si

energy range	0.1	5.9eV

reference	Reference 32:

comment 	Obtained on polycristalline films by reflectivity and ellipsometry


Chromium silicide 2

Filename	Cr5Si3

symbol	Cr5Si3

energy range	0.1	5.9eV

reference	Reference 32:

comment 	Obtained on polycristalline films by reflectivity and ellipsometry


Chromium silicide 3

Filename	CrSi2EL2

symbol	CrSi2

energy range	11	23.1eV

reference	Reference 33:

comment 	Obtained on polycristalline films by synchrotron radiation


Iron silicide 1

Filename	FeSi2EL1

symbol	FeSi2

energy range	4.5	9eV

reference	Reference 35:

comment 	Obtained on polycristalline film


Iron silicide 2

Filename	FeSi2EL2

symbol	FeSi2

energy range	11	23.1eV

reference	Reference 35:

comment 	Obtained on polycristalline film


Iron silicide 3

Filename	FeSi2EPI

symbol	FeSi2

energy range	0.2	5eV

reference	Reference 34:

comment 	Obtained on epitaxial film


Hafnium silicide

Filename	HFSi2

symbol	HfSi2

energy range	0.01	9.5eV

reference	Reference 36:

comment 	Obtained on polycristalline film


Iridium silicide 1

Filename	IR3Si5P

symbol	Ir3Si5

energy range	0.6	5.5eV

reference	Reference 37:

comment 	Obtained on polycristalline film


Iridium silicide 2

Filename	IR3Si5E

symbol	Ir3Si5

energy range	4.1	8.2eV

reference	Reference 35:

comment 	Obtained on polycristalline film by synchrotron radiation


Molybdenum silicide

Filenames	mosi2-a (parallel to c axis)

mosi2-b (perpendicular to c axis)

symbol	MoSi2

energy range	1	4.4eV

reference	Reference 38:

comment 	Obtained on single crystal


Niobium silicide

Filename	nbsi2-a (parallel to the c-axis)

nbsi2-c (perpendicular to the c axis)

symbol	NbSi2

energy range	0.1	6eV

reference	Reference 39:

comment 	Obtained on single crystal


Nickel silicide 1

Filename	Ni3Si

symbol	Ni3Si

energy range	0.2	5.8eV

reference	Reference 40:

comment 	Obtained on polycristalline film


Nickel silicide 2

Filename	Ni2Si

symbol	Ni2Si

energy range	0.2	5.8eV

reference	Reference 40:

comment 	Obtained on polycristalline film


Nickel silicide 3

Filename	NiSi

symbol	NiSi

energy range	0.2	5.8eV

reference	Reference 40:

comment 	Obtained on polycristalline film


Paladium silicide

Filename	pd2si-a (perpendicular to the c-axis)

pd2si-b (parallel to the c axis)

symbol	Pd2Si

energy range	0.1	6.9eV

reference	Reference 41:

comment 	Obtained on single crystal


Rhenium silicide

Filename	Resi1-75

symbol	ReSi1.75

energy range	0.01	12eV

reference	Reference 42:

comment 	Obtained on single crystalline bulk samples


Tantalum silicide

Filename	TaSi2-a (perpendicular to c axis)

TaSi2-b (parallel to c-axis)

symbol	TaSi2

energy range	0.02	10eV

reference	Reference 43:

comment 	Obtained on single crystal


Titanium silicide

Filename	TISI-A

symbol	TiSi2

energy range	0.02	19.5eV

reference	Reference 44:

comment 	Obtained on single crystal


Vanadium silicide

Filename	VaSi2-a (perpendicular to c axis)

VaSi2-b (parallel to c-axis)

symbol	VaSi2

energy range	0.01	4.9eV

reference	Reference 39:

comment 	Obtained on single crystal


Tungsten silicide

Filename	WSi2-a (perpendicular to c axis)

WSi2-b (parallel to c-axis)

symbol	WSi2

energy range	0.02	7.5eV

reference	Reference 45:

comment 	Obtained on single crystal


Zirconium silicide

Filename	ZrSi2

symbol	ZrSi2

energy range	1.8	3.0eV

reference	Reference 46:

comment 	Obtained on polycristalline film


Silicon

Amorphous Silicon

Amorphous Silicon 1

Amorphous Silicon 2

Crystalline Silicon

Crystalline Silicon (orientation effect)

Crystalline silicon (Effect of the temperature)

Polysilicon 1

Polysilicon 2

Porous silicon


Amorphous Silicon

Filename	ASi

symbol	a-Si

wavelength range	0.25	0.84µm

reference	Reference 13


Amorphous Silicon 1

Filename	Siam1

symbol	a-Si

energy range	0.6	6eV

reference	Reference 11


Amorphous Silicon 2

Filename	Siam2

symbol	a-Si

energy range	1	6eV

reference	Reference 11


Crystalline Silicon

Filename	Sicr

symbol	Si

energy range	0.5	7.6eV

reference	Reference 11


Crystalline Silicon (orientation effect)

Filename	Si100_2 (100 orientation)

Filename	Si110 (110 orientation)

Filename	Si111 (111 orientation)

symbol	Si

wavelength range	0.23	0.84μm

reference	Reference 11


Crystalline silicon (Effect of the temperature)

Nine different temperatures

symbol	Si

energy range	1.5	4.7eV

reference	Reference 11


Polysilicon 1

Filename	P_Siud

symbol	Si

wavelength range	0.24	0.84μm

reference	Reference 11

comment	This is heavily As doped , large grain poly Si


Polysilicon 2

Filename	SiPoly

symbol	Si

energy range	1	5.9eV

reference	Reference 11

comment 	This is a fine grain polysilicon.


Porous silicon

Filename	SiPore

symbol	Si

energy range	1	5.9eV

reference	Reference 11


Silicon Compounds

Silicon Arsenide

Silicon Carbide


Silicon Arsenide

Filename	P_SiAs

symbol	SiAs

wavelength range	0.24	0.84μm

reference	Reference 11


Silicon Carbide

Filename	SiC

symbol	SiC

wavelength range	0.19	1.25μm

reference	Reference 11


Miscellaneous

Amorphous carbon

Barium fluoride

Calcium Fluoride

Cadmium Selenide

Cadmium Telluride

Cubic carbon (diamond)

Hexachoromethane

ITO

Lead Selenide

Lead Sulfide

Lithium

Lithium fluoride

Magnesium Fluoride

Potassium Chloride

Thorium Fluoride

Water


Amorphous carbon

Filename	Carbam

symbol	a-C

wavelength range	0.3	0.84µm

reference	Reference 3


Barium fluoride

Filename	BaF2

symbol	BaF2

wavelength range	0.2	2 µm

reference	Reference 20


Calcium Fluoride

Filename	CaF2

symbol	CaF2

energy range	1	6.5 eV

reference	Reference 8


Cadmium Selenide

Filename	CdSe

symbol	CdSe

energy range	0.5	6.5 eV

reference	Reference 14


Cadmium Telluride

Filename	CdTe

symbol	CdTe

energy range	0.5	5 eV

reference	Reference 1


Cubic carbon (diamond)

Filename	Diam

symbol	C

energy range	0.5	5.8 eV

reference	Reference 3


Hexachoromethane

Filename	CCl4

symbol	CCl4

wavelength range	0.25	0.9µm

reference	Reference 20


ITO

Filename	ITO2

symbol	ITO

wavelength range	0.25	0.85µm

reference	Reference 11


Lead Selenide

Filename	PbSe

symbol	PbSe

energy range	1	6eV

reference	Reference 11


Lead Sulfide

Filename	PbS

symbol	PbS

energy range	0.5	6.2eV

reference	Reference 11


Lithium

Filename	Li

symbol	Li

energy range	1.05	6.75eV

reference	Reference 11


Lithium fluoride

Filename	LiF

symbol	LiF

energy range	0.5	6eV

reference	Reference 11


Magnesium Fluoride

Filename	MgF2

symbol	MgF2

wavelength range	0.25	0.9μm

reference	Reference 11


Potassium Chloride

Filename	KCl

symbol	KCl

energy range	0.5	6eV

reference	Reference 11


Thorium Fluoride

Filename	ThF4

symbol	ThF4

energy range	0.65	5.6eV

reference	Reference 11


Water

Filename	H2O

symbol	H2O

energy range	1.5	6eV

reference	Reference 11


References :

Reference 1

Reference 2

Reference 3

Reference 4

Reference 5

Reference 6

Reference 7

Reference 8

Reference 9

Reference 10

Reference 11

Reference 12

Reference 13

Reference 14

Reference 15

Reference 16

Reference 17

Reference 18

Reference 19

Reference 20

Reference 21

Reference 22

Reference 23

Reference 24

Reference 25

Reference 26

Reference 27

Reference 28

Reference 29

Reference 30

Reference 31

Reference 32:

Reference 33:

Reference 34:

Reference 35:

Reference 36:

Reference 37:

Reference 38:

Reference 39:

Reference 40:

Reference 41:

Reference 42:

Reference 43:

Reference 44:

Reference 45:

Reference 46:

Reference 47:

Reference 48:


Reference 1

Handbook of Optical Constants of Solids, Edited by E.D. PALIK. Academic Press, 1985.


Reference 2

ASPNES and H.J. STOCKER, .J.Vac.Sci.Technol. 21,413,(1982)


Reference 3

SOPRA Measurements


Reference 4

Handbook of Chemistry and Physics Edited. by R.C. WEAST and M.J. ASTLE. CRC Press 1981


Reference 5

BOS and D.W. LYNCH. Phys. Rev. B 2 (1970) 4567


Reference 6

LYNCH , C.G OLSON , J.H. WEAVER, Phys. Rev . B 11 (1975) 3617


Reference 7

SCHOTT Technical Note


Reference 8

Handbook of Optics, Edited by W.G. DRISCOLL and W. VAUGHAN .Mc Graw-Hill book Company 1978.


Reference 9

D.E ASPNES, S.M. KELSO ,R.A. LOGAN and R.BHAT, J.Appl.Phys. 60, 754, (1986).


Reference 10

G.E.JELLISON,Jr."Optical functions of Si determined by two Channel polarization modulation ellilpsometry".Optical Material 1,41-47 (1992)


Reference 11

G.E.JELLISON,Jr."Optical functions of GaAs,GaP, Ge determined by two  channel polarization ellipsometry", Opticals Materials 1 ,151-160 (1992)


Reference 12

G.E.JELLISON,Jr."Optical functions of Si, Ge alloys determined using  spectroscopic ellipsometry .", Optical Materials


Reference 13

G.E.JELLISON,Jr."Optical functions of CVD-grown thin-film Si determined by spectroscopic ellipsometry .", App. Phys. Letters


Reference 14

Handbook of Optical Constants of Solids II, Edited by E.D.PALIK .Academic Press , 1985.


Reference 15

CNET Meylan Measurements .France


Reference 16

Index calculated with the Bruggeman method. SipolyX is a mixture of X % of Siam1 and 1-X % of Sicr


Reference 17

G.VUYE,S.FISSON,V.NGUYEN,Y.WANG,J.RIVORY,F.ABELES, "Temperature Dependance of the dielectric function of Silicon using Ellipsometry.


Reference 18

D.E.ASPNES,G.P.SCHWARTZ,G.J.GUALTIERI,A.A.STUDNA, and B.SCHWARTZ, J.Electrochem. Soc. 128,590 (1981).


Reference 19

H.KATO,S. ADACHI, H.NAKANISHI, K. OHTSUKA. "Optical Properties of (AlxGa1-x)0.5 In0.5 P Quaternary alloys" .Japan J. Appl. Phys. Vol 33 (1994) pp. 186-192. Part 1,N01A. January 1994.


Reference 20

Wemple. M. Didomenico, Jr. " Behavior of the Electronic Dielectric constant in covalent and ionic material". Physical Review B. Vol 3, N°4.1971


Reference 21

For SixGe(1-x)

•	For initial spectra: J.Humlicek, M.Carriga, M.I.Alonso, and M.Cardona, "Optical spectra of SixGe(1-x) alloys", J.Appl.Phys., 65(7) (1989) 2827-2832.

•	For critical point polynomials: C.Pickering, R.T.Carline D.J.Robbins, W.Y.Leong, S.J.Barnett, A.D.Pitt, "Spectroscopic Ellipsometry characterization of strained and relaxed Si(1-x)Gex epitaxial layers", J.Appl.Phys.73(1)(1993) 239-250.


Reference 22

•	R.T.Carline,C.Pickering,D.J.Robbins,W.Y.Leong, A.D.Pitt, and A.G.Cullis, "Dielectric functions and critical points of strained SixGe(1-x) on Si (100)", Appl.Phys.Lett.(submitted)

•	R.M.Sieg, S.A.Alterovitz, E.T.Croke and M.J.Harrell, "Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices", Appl.Phys.Lett.62(14) (1993) 1626-1628.

•	"Near Band-Gap photoluminescence from pseudomorphic Si(1-x)Ge(x) single layers on silicon", D.J.Robbins, L.T.Canham, S.J.Barnett, A.D.Pitt, and P.Calcott, J.Appl.Phys. 71(3) (1992) 1407-1414.


Reference 23

C.Pickering, R.Carline, and M.T.Elmeny, N.S.Garawal, and L.K.Howard, "Dielectric functions and critical points of strained InxGa(1-x)As on GaAs", Appl.Phys.Lett., 60(19), (1992) 2412-2414.


Reference 24

"Temperature dependance of the dielectric function of silicon using in-situ spectroscopic ellipsometry", G.Vuye,S.Fisson,V.Nguyen Van,Y.Wang, J.Rivory,F.Abeles, Thin Solid Films, 233(1993)166-170


Reference 25

S.IMAI, S. Adachi ." Optical constants of In1-xGaxSb Ternary alloys : Experiment and Modeling ", Jpn. Appl. Phys. Vol 32 (1993), pp.3860-3865.Part 1, N° 9A, September 1993.


Reference 26

Original 22 points given by Corning.


Reference 27

Sellmeier fit on COR7059.NK and extension of the spectral range.


Reference 28

T.Toshifumi, S. Adachi , H. Nakanishi. , and K. Ohtsuka. "Optical constants of Zn1-xCdxTe Ternary alloys : Experiment and Modeling ", Jpn. Appl. Phys. Vol 32 (1993) pp.3496-3501, Part 1, N° 8, August 1993.


Reference 29

S.Ozaki, S. Adachi ." Optical constants of ZnSexTe1-x alloys ". Jpn. Appl. Phys. Vol 32 (1993) pp.2620-2625, Part 1, N° 6A, August 1993.


Reference 30

Stefan Zollner, "Model dielectric functions for native oxides on compound semiconductors ", Appl. Phys. Lett., 63 (18), 1 November 1993, pp 2523-2524


Reference 31

C. Viguier, A. Cros, A.Humbert, C. Ferrieu, O. Thomas, R.Madar, J.P. Senatur, Sold. State Comm., vol.60 (1986) p.923-926


Reference 32:

G.Puizzetti and F. Marabelli, private communication


Reference 33:

W. Henrion, H. Lange, E. Jahne, M. Giehler, Appl. Surf. Sci., vol 70/71 (1993) p.569-572


Reference 34:

V. Bellani, G. Guizzetti, F. Marabelli; S. Lagomarsino, H. von Kanel, Solid State Comm. (1994) to be published


Reference 35:

H.Lange, W. henrion; E.Jahne, M. Giehler, O.Guenther, J. Schumann, Proc. Mat. Res. Soc., Fall Meeting, vol. 324 (1994)


Reference 36:

A.Borghesi, F. Marabelli, G.Guizzeti, M. Michelini, F.Nava, J. Appl. Phys., vol.69 (1991) p. 7645-50


Reference 37:

Th.Zettler, J. Schumann, H. Lange, private communication


Reference 38:

P. Ged, R. Madar, J.P. Senateur, Phys. rev. B, vol.29 (1984) p;6981


Reference 39:

G. Guizzetti, F. marabelli, A. Borghesi, F. Nava, U. Gottlieb, O. Laborde, Appl. Surf. Sci; vol.73 (1993) p.237-42


Reference 40:

M.Amiotti, A.Borghesi, G. Guizzetti, F. Nava, Phys. Rev. B, vol.42 (1990) p.8939-45


Reference 41:

M.Amiotti, G.Guizzetti, F. Marabelli, A. Piaggi, V. Antonov, O. Jepsen, O. Andersen, A. Borghesi, F. Nava, Phys. Rev. B, vol.45 (1992) p. 13285-92


Reference 42:

T. Siegrist, F. Hullinger, G. Travaglini, J. Less. Comm. Met., vol.92 (1983) p.119


Reference 43:

M. Tanaka, S. Kurita, M. Fujisawa, F. Levy, Phys. Rev. B, vol.46 (1992) p.10442-5


Reference 44:

M. Tanaka, S. Kurita, M. Fujisawa, F. Levy, Phys. Rev. B, vol.43 (1991) p;9133-7


Reference 45:

V.Antonov, O.Jepsen, O. Andersen, A.Borgehsi, C. Bosio, F. Marabelli, A.Piaggi, G. Guizzetti, F. Nava, Phys. Rev. B, vol.44 (1991) p.8437-45


Reference 46:

S.Mu, J.Lue, I.Wu, J. Phys. Chem. Sol., vol.49 (1988) p.1389-95


Reference 47:

C.Kuo, S.Anand, R.Droopad, K.Choi, G.Maracas, J.Vac. Sci. Technol., B, 12 (1994) 1214


Reference 48:

C.Kuo, S.Anand, H.Fathollabhnejad, R.Ramamurti, R.Droopad, G.Maracas, NA MBE 94 Conference, Standford, CA, USA (1994).


Introduction

In the following we summarize some dispersion laws which can be used to fit experimental data very easily using WinElli. With have some standard dielectric functions mainly for insulator materials, some Forouhi dispersion laws for semiconductors and some model dielectric functions for III-V and II-VI materials.


Standard dielectric functions

Aluminum oxide Al2O3

Glass BK7

Cesium Fluoride CeF3

Cesium oxide CeO2

Germanium oxide GeO2

Hafnium oxide HfO2

Lanthanum oxide

Lanthanum fluoride LaF3

Niodium fluoride NdF3

Tantalum oxide Ta2O5

Yttrium oxide Y2O3

Zirconium oxide ZrO2


Aluminum oxide Al2O3

Reference Filename: AL2O3.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (n k)

A = 	1.645

B = 	5.073E-03

C = 	2.309E-05

D = 	0

E = 	0

F = 	0


Dispersion laws - Standard dielectric functions - Glass BK7
Glass BK7

Reference Filename: 	BK7.SDF

Number of Peaks: 	0

UV Term: 	Exp. Series

A = 	2.271176

B = 	-0.0097007

C = 	0.0110971

D = 	0.

E = 	0.

F = 	0.


Cesium Fluoride CeF3

Reference Filename: CEF3.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	2.558

B = 	0.01934

C = 	0

D = 	0

E = 	0

F = 	0


Cesium oxide CeO2

Reference Filename: 	CEO2.SDF

UV Term: 	Cauchy (epsi)

A = 	3.6213

B = 	0.17117

C = 	0

D = 	0

E = 	0

F = 	0


Germanium oxide GeO2

Reference Filename: geo2.sdf

Number of Peaks: 	0

UV Term: 	Cauchy (n k)

A = 	1.564686

B = 	1.88848866341441E-02

C = 	-1.18259777022929E-03

D = 	-3.70124791377904E-04

E = 	5.68743416864245E-04

F = 	1.63197156606449E-04


Hafnium oxide HfO2

Reference Filename: 	HFO2.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	3.8524

B = 	0.09188

C = 	0

D = 	0

E = 	0

F = 	0


Lanthanum oxide

Reference Filename: 	LA2O3.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	3.3087

B = 	0.06952

C = 	0

D = 	0

E = 	0

F = 	0


Lanthanum fluoride LaF3

Reference Filename: LAF3.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	2.5246

B = 	0.01247

C = 	0

D = 	0

E = 	0

F = 	0


Niodium fluoride NdF3

Reference Filename: NDF3.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	2.5582

B = 	0.01703

C = 	0

D = 	0

E = 	0

F = 	0


Tantalum oxide Ta2O5

Reference Filename: TA2O5.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	4.2446

B = 	0.13158

C = 	0

D = 	0

E = 	0

F = 	0


Yttrium oxide Y2O3

Reference Filename: 	Y2O3.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	3.1286

B = 	0.04195

C = 	0

D = 	0

E = 	0

F = 	0


Zirconium oxide ZrO2

Reference Filename: ZRO2.SDF

Number of Peaks: 	0

UV Term: 	Cauchy (epsi)

A = 	3.8907

B = 	0.09178

C = 	0

D = 	0

E = 	0

F = 	0


Forouhi Interband Model

Amorphous silicon A-Si

Titanium oxide TiO2

Silicon carbide SiC

Copper Cu

Cristalline Silicon SiCr


Amorphous silicon A-Si

Reference Filename: 	A-SI.FIM

Number of Peaks: 	1

Infinite wavel. index and Gap Energy: 	Noo & Eg

Noo = 	2.433

Eg = 	1.65


Titanium oxide TiO2

Reference Filename: A-TIO2.FIM

Number of Peaks: 	1

Infinite wavel. index and Gap Energy: 	Noo & Eg

Noo = 	1.7614

Eg = 	2.8


Silicon carbide SiC

Reference Filename: 	C:\WINELLI\LAWS\C-SIC.FIM

Number of Peaks: 	4

Infinite wavel. index and Gap Energy: 	Noo & Eg

Noo = 	1.353

Eg = 	2.5


Copper Cu

Reference Filename: CU-UV.FIM

Number of Peaks: 	3

Infinite wavel. index and Gap Energy: 	Noo & Eg

Noo = 	1.711

Eg = 	0


Cristalline Silicon SiCr

Reference Filename: SICR.FIM

Number of Peaks: 	4

Infinite wavel. index and Gap Energy: 	Noo & Eg

Noo = 	1.95

Eg = 	1.06


Model Dielectric function

AlSb

Cadmium Telluride CdTe

Gallium Antimonide GaSb

Indium Gallium antimonide InGaSb

Zirconium Cadnium Telluride ZnCdTe

Zirconium Cesium Telluride ZnSeTe


AlSb

Reference Filename: 	ALSB.MDF

Number of Peaks: 	8

UV Term: 	Constant

A = 	0


Cadmium Telluride CdTe

Reference Filename: 	CDTE.MDF

Number of Peaks: 	5

UV Term: 	Constant

A = 	1.27


Gallium Antimonide GaSb

Reference Filename: GASB.MDF

Number of Peaks: 	6

UV Term: 	Constant

A = 	1.2


Indium Gallium antimonide InGaSb

Seven reference Filenames: 	INGASB0.MDF to INGASB10.MDF

These dispersion laws correspond to the dielectric functions offered in the database. We report just here the parameters corresponding to INGASB0

Number of Peaks: 	6

UV Term: 	Constant

A = 	1.2


Zirconium Cadnium Telluride ZnCdTe

Seven reference Filenames: ZNCDTE0.MDF to ZNCDTE10.MDF

These dispersion laws correspond to the dielectric functions offered in the database. We report just here the parameters corresponding to ZNCDTE0.

Number of Peaks: 	5

UV Term: 	Constant

A = 	0.5


Zirconium Cesium Telluride ZnSeTe

Seven Reference Filenames: ZNSETE0.MDF to ZNSETE10.MDF

These dispersion laws correspond to the dielectric functions offered in the database. We report just here the parameters corresponding to ZNSeTE10.

Number of Peaks: 	5

UV Term: 	Constant

A = 	0.5


Handbook of Optical Constants of Solids, Edited by E.D. Palik, Academic Press (1985)


D.E. Aspnes, S.Kelso, R.Logan, R. Bhat, "Optical properties of AlxGa1-xAs", J. Appl. Phys., 60, 754 (1986)